IRGS4056DPbF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

* Low VCE (ON) Trench IGBT Technology

* Low switching losses

* Maximum Junction temperature 175 °C

* 5 µS short circuit SOA

* Square RBSOA

* 100% of the parts tested for 4X rated current (ILM)

* Positive VCE (ON) Temperature co-efficient

IRGS4056DPbF

International Rectifier

400.62 KB

Insulated gate bipolar transistor.

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