IRGS4064DPBF Datasheet - International Rectifier

IRGS4064DPBF, Power MOSFET

PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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IRGS4064DPBF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGS4064DPBF

Manufacturer:

International Rectifier

File Size:

296.95 KB

Description:

Power MOSFET

Features

* Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA 100% of The Parts Tested for (ILM) Positive VCE (on) Temperature Coefficient. Ultra

Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
* Low EMI G C E D2Pak G C E Gate Absolute Maximum Ratin

IRGS4064DPBF Distributors

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IRGS4064DPBF Power MOSFET International Rectifier

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