IRGS4640DPbF Datasheet, Transistor, Infineon

IRGS4640DPbF Features

• Transistor E n-channel G Gate E GC IRGS4640DPbF D2Pak GCE E C GCE G GCE IRGSL4640DPbF IRGB4640DPbF IRGP4640DPbF IRGP4640D-EPbF TO-262Pak TO-220AC TO-247AC TO-247AD C Collector E Emit

PDF File Details

Part number:

IRGS4640DPbF

Manufacturer:

Infineon ↗

File Size:

752.59kb

Download:

📄 Datasheet

Description:

Insulated gate bipolar transistor.

IRGS4640DPbF Application

• Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding Features E n-channel G Gate E GC IRGS4640DPbF D2

TAGS

IRGS4640DPbF

Infineon

📁 Related Datasheet

IRGS4607DPBF - Insulated Gate Bipolar Transistor (International Rectifier)
  VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.75V @ IC = 4.0A IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate.

IRGS4610DPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 10A, TC = 100°C tsc > 5µs.

IRGS4615DPBF - Power MOSFET (International Rectifier)
IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175.

IRGS4620DPBF - Power MOSFET (International Rectifier)
IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥ .

IRGS4620DPbF - IGBT (Infineon)
VCES = 600V IC = 20A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.55V @ IC = 12A Applications • Industrial Motor Drive • Inverters • UPS • W.

IRGS4630DPBF - Insulated Gate Bipolar Transistor (International Rectifier)
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C C.

IRGS4630DPbF - IGBT (Infineon)
VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications • Industrial Motor Drive • Inverters • UPS • W.

IRGS4045DPBF - Insulated Gate Bipolar Transistor (International Rectifier)
IRGS4045DPbF VCES = 600V IC  6.0A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC tsc > 5µs, Tjmax = 175°C VCE.

IRGS4055PBF - PDP Trench IGBT (International Rectifier)
PD - 97058B PDP TRENCH IGBT Features Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l L.

IRGS4056DPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 96197 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losse.