.
Toshiba Semiconductor
GT45F123 - Insulated Gate Bipolar Transistor
GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications • • • • • 5th generation (trench gate stru.
Thinki Semiconductor
MBRF20100CT - 20.0 Ampere Insulated FullPak High Voltage Schottky Barrier Rectifiers
MBRF2040CT thru MBRF20250CT ® Pb Free Plating Product MBRF2040CT thru MBRF20250CT Pb 20.0 Ampere Insulated FullPak High Voltage Schottky Barrier .
International Rectifier
IRGP4063DPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • L.
International Rectifier
G4PC30F - INSULATED GATE BIPOLAR TRANSISTOR
PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Features www.DataSheet4U.com C Fast Speed IGBT • Fast: Optimized for medium operating frequen.
Huajing Microelectronics
BT40T60ANFD - Insulated gate bipolar transistor
BT40T60 ANFD ○R BT40T60 ANFD FS IGBT ， ，。 RoHS 。 ● FS ，； ● ：VCE(sat),TYP=1.8V @IC=40A,VGE=15V ； VCES IC Ptot （TC=25℃） VCE(sat) 600 40 280 .
International Rectifier
IRGP4066D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
PD - 97576 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Sw.
Advanced Power Electronics
AP80N03GP-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electronics Corp. AP80N03GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D BVDSS 30V ▼ Fas.
International Rectifier
IRGP4062D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IG.
Infineon
AUIRGPS4067D1 - INSULATED GATE BIPOLAR TRANSISTOR
AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Trench IGBT Technology .
IRF
IRG4PH50S - INSULATED GATE BIPOLAR TRANSISTOR
PD -91712A IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( .
International Rectifier
GB10B60KD - INSULATED GATE BIPOLAR TRANSISTOR
www.DataSheet4U.com PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = .
Advanced Power Electronics
AP50G60W-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP50G60W-HF Halogen-Free Product Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ. =2.5V@IC=40A.
International Rectifier
IRGP4068D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
www.DataSheet4U.com PD - 97250 IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLI.
Thinki Semiconductor
XS4202 - 200Volt Insulated Fast Recovery Diode
XS4202 ® XS4202 Pb Free Plating Product Pb 20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine APPLICATION · Freewheeling, Snubber.
International Rectifier
IRG4BH20K-S - INSULATED GATE BIPOLAR TRANSISTOR
PD -93960 IRG4BH20K-S INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , .
International Rectifier
IRG4PSC71UD - INSULATED GATE BIPOLAR TRANSISTOR
PD - 91682A IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Generation 4 IGBT design provides tighter par.
Powerex Power Semiconductors
CT60AM-18F - INSULATED GATE BIPOLAR TRANSISTOR
MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING 20MAX. Dimensions in mm 5 2 φ3.2 6 1 2 1 .
