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MGP14N60E Datasheet - Motorola

MGP14N60E, Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP14N60E/D Insulated Gate Bipolar Transistor N *Channel Enhancement.
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MGP14N60E_MotorolaInc.pdf

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Datasheet Details

Part number:

MGP14N60E

Manufacturer:

Motorola

File Size:

125.43 KB

Description:

Insulated Gate Bipolar Transistor

Features

* Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use,

Applications

* requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E
* series introduces an Energy
* efficient, ESD protected, and short circuit rugged device.

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