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MGP14N60E Datasheet - Motorola

MGP14N60E - Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP14N60E/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability.

Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on).

It also provide

MGP14N60E Features

* Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use,

MGP14N60E_MotorolaInc.pdf

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Datasheet Details

Part number:

MGP14N60E

Manufacturer:

Motorola

File Size:

125.43 KB

Description:

Insulated gate bipolar transistor.

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