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MGP11N60ED Datasheet - Motorola

MGP11N60ED Insulated Gate Bipolar Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both .

MGP11N60ED Datasheet (130.62 KB)

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Datasheet Details

Part number:

MGP11N60ED

Manufacturer:

Motorola

File Size:

130.62 KB

Description:

Insulated gate bipolar transistor.

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MGP11N60ED Insulated Gate Bipolar Transistor Motorola

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