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MGP11N60ED Insulated Gate Bipolar Transistor

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N *Channel Enhancement.

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Datasheet Specifications

Part number
MGP11N60ED
Manufacturer
Motorola
File Size
130.62 KB
Datasheet
MGP11N60ED-Motorola.pdf
Description
Insulated Gate Bipolar Transistor

Applications

* requiring both a high tempera- ture short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co
* packaged IGBTs save space, reduce assembly time and cost. This new E
* series introduces an energy

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Insulated Gate Bipolar Transistor Motorola
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