Datasheet4U Logo Datasheet4U.com

MGP11N60ED Datasheet - Motorola

MGP11N60ED Insulated Gate Bipolar Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both .

MGP11N60ED-Motorola.pdf

Preview of MGP11N60ED PDF
MGP11N60ED Datasheet Preview Page 2 MGP11N60ED Datasheet Preview Page 3

Datasheet Details

Part number:

MGP11N60ED

Manufacturer:

Motorola

File Size:

130.62 KB

Description:

Insulated gate bipolar transistor.

📁 Related Datasheet

MGP11N60E Insulated Gate Bipolar Transistor (Motorola)

MGP14N60E Insulated Gate Bipolar Transistor (Motorola)

MGP15N35CL Internally Clamped N-Channel IGBT (ON)

MGP15N38CL Internally Clamped N-Channel IGBT (Motorola)

MGP15N40CL Internally Clamped N-Channel IGBT (ON)

MGP15N43CL Internally Clamped N-Channel IGBT (Motorola)

MGP15N60U Insulated Gate Bipolar Transistor (Motorola)

MGP19N35CL IGBT (ON Semiconductor)

TAGS

MGP11N60ED MGP11N60ED Insulated Gate Bipolar Transistor Motorola

MGP11N60ED Distributor