MGP11N60ED Datasheet - Motorola

MGP11N60ED, Insulated Gate Bipolar Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N *Channel Enhancement.

datasheet Preview Page 1 from Datasheet4u.com

MGP11N60ED-Motorola.pdf

MGP11N60ED Datasheet Preview — Preview of MGP11N60ED PDF

Datasheet Details

Part number:

MGP11N60ED

Manufacturer:

Motorola

File Size:

130.62 KB

Description:

Insulated Gate Bipolar Transistor

Applications

* requiring both a high tempera- ture short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co
* packaged IGBTs save space, reduce assembly time and cost. This new E
* series introduces an energy

MGP11N60ED Distributors

📁 Related Datasheet

MGP15N35CL MGP15N40CL MGP19N35CL MGP3006 MGP3006X MGP3006X6

📌 All Tags

MGP11N60ED Insulated Gate Bipolar Transistor Motorola

Motorola MGP11N60ED-like datasheet