MGP15N60U - Insulated Gate Bipolar Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP15N60U/D Product Preview Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability.
It also provides fast switching characteristics and results in efficient operation at high frequencies.
Ind
MGP15N60U Features
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* 6274 Mfax™: RMFAX0@email.sps.mot.com
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* 6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System
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