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MGP11N60E Datasheet - Motorola

MGP11N60E, Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP11N60E/D Insulated Gate Bipolar Transistor N *Channel Enhancement.
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MGP11N60E_MotorolaInc.pdf

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Datasheet Details

Part number:

MGP11N60E

Manufacturer:

Motorola

File Size:

123.52 KB

Description:

Insulated Gate Bipolar Transistor

Applications

* requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E
* series introduces an Energy
* efficient, ESD protected, and short circuit rugged device.

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