CT60AM-18F Datasheet - Powerex Power Semiconductors

CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR

MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING 20MAX. Dimensions in mm 5 2 φ3.2 6 1 2 1 0.5 3 5.45 5.45 q VCES 900V q IC 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation Voltage 4.0 GATE COLLECTOR EMITTER COLLECTOR TO-3PL APPLICATION Microwave oven, Electromagnetic cooking devices, Rice-cookers MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM IE PC Tj T stg (Tc = 25°C) .

CT60AM-18F_PowerexPowerSemiconductors.pdf