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IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR

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Description

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Features

* C
* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA G
* 100% of the parts tested for ILM 
* Positive VCE (ON) Temperature co-efficient
* Ult

Applications

* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI E GC TO-220AB IRGB4062DPbF G Gate E GC E GC TO-24

IRGP4062D-EPbF Distributors

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📌 All Tags

IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
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