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IRGP450U

INSULATED GATE BIPOLAR TRANSISTOR

IRGP450U Features

* Switching-loss rating includes all "tail" losses

* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.2V @VGE = 15V, I C = 33A n-channel Description Insulated Gate Bipolar Transistors (IGBTs

IRGP450U General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGP450U Datasheet (260.47 KB)

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Datasheet Details

Part number:

IRGP450U

Manufacturer:

IRF

File Size:

260.47 KB

Description:

Insulated gate bipolar transistor.

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IRGP450U INSULATED GATE BIPOLAR TRANSISTOR IRF

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