IRGP4062DPBF, IRGB4062DPBF Datasheet - International Rectifier

IRGP4062DPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4062DPBF Features

* C

* Low VCE (ON) Trench IGBT Technology

* Low switching losses

* Maximum Junction temperature 175 °C

* 5 μS short circuit SOA

* Square RBSOA G

* 100% of the parts tested for ILM

* Positive VCE (ON) Temperature co-efficient

* Ult

Datasheet Details

IRGP4062DPBF, IRGB4062DPBF

International Rectifier

430.21 KB

Insulated gate bipolar transistor.

This datasheet PDF includes multiple part numbers: IRGP4062DPBF, IRGB4062DPBF.
Please refer to the document for exact specifications by model.

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