IRGP4062DPBF Features
* C
* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA G
* 100% of the parts tested for ILM
* Positive VCE (ON) Temperature co-efficient
* Ult
IRGB4062DPBF_InternationalRectifier.pdf
Datasheet Details
IRGP4062DPBF, IRGB4062DPBF
International Rectifier
430.21 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP4062DPBF, IRGB4062DPBF.
Please refer to the document for exact specifications by model.
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