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IRGP430U

INSULATED GATE BIPOLAR TRANSISTOR

IRGP430U Features

* Switching-loss rating includes all "tail" losses

* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 15A n-channel Description Insulated Gate Bipolar Transistors (IGBTs

IRGP430U General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGP430U Datasheet (256.41 KB)

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Preview of IRGP430U PDF

Datasheet Details

Part number:

IRGP430U

Manufacturer:

IRF

File Size:

256.41 KB

Description:

Insulated gate bipolar transistor.

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Stock and price

part
Diotec Semiconductor AG
ES1F
DIODE STANDARD 300V 1A DO214AC
DigiKey
7385 In Stock
Qty : 2000 units
Unit Price : $0.1

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IRGP430U INSULATED GATE BIPOLAR TRANSISTOR IRF

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