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IRGP440U

INSULATED GATE BIPOLAR TRANSISTOR

IRGP440U Features

* Switching-loss rating includes all "tail" losses

* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 22A n-channel Description Insulated Gate Bipolar Transistors (IGBTs

IRGP440U General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGP440U Datasheet (254.97 KB)

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Datasheet Details

Part number:

IRGP440U

Manufacturer:

IRF

File Size:

254.97 KB

Description:

Insulated gate bipolar transistor.

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IRGP440U INSULATED GATE BIPOLAR TRANSISTOR IRF

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