Part number: IRGP4050
Manufacturer: IRF
File Size: 282.75KB
Download: 📄 Datasheet
Description: PDP Switch
*
*
*
*
*
*
Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector current rating reduces component c.
104A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive.
This IGBT is specifically designed for sustain & energy recovery application in plasma display panels. This IGBT features low V CE (ON) and fast switching times to improve circuit efficiency and reliability. Low temperature co-efficient of VCE (ON) m.
Image gallery
TAGS
📁 Related Datasheet
IRGP4055DPBF - PDP TRENCH IGBT
(International Rectifier)
www..com
PD - 97222
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PD.
IRGP4062-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS s.
IRGP4062D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) Trench IG.
IRGP4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) Trench IG.
IRGP4063-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 97404
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction tem.
IRGP4063D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4063DPbF IRGP4063D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • • • Low VCE (ON) Trench IGBT.
IRGP4063D1-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4063D1PbF IRGP4063D1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(.
IRGP4063D1PBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4063D1PbF IRGP4063D1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(.
IRGP4063DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4063DPbF IRGP4063D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology • L.
IRGP4063PBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 97404
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction tem.