PDP Datasheet | Specifications & PDF Download

FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

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80V N-Channel MOSFETs PDP8974 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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PD - 97484 IRG7R313UPbF PDP TRENCH IGBT Features Key Parameters l Advanced Trench IGBT Technology VCE min 330 V l Optimized for Sustain and Ene

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PDP TRENCH IGBT PD - 97562 IRG7IC28UPbF Features l Advanced Trench IGBT Technology Key Parameters VCE min 600 V l Optimized for Sustain and Ene

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PDP TRENCH IGBT PD - 97132 IRGP4086PbF Features Key Parameters l Advanced Trench IGBT Technology VCE min 300 V l Optimized for Sustain and Ene

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PDP TRENCH IGBT PD - 97562 IRG7IC28UPbF Features l Advanced Trench IGBT Technology Key Parameters VCE min 600 V l Optimized for Sustain and Ene

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100V N-Channel MOSFETs PDP0976 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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60V N-Channel MOSFETs PDP6902 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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FGPF4536 — 360 V PDP Trench IGBT FGPF4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE (sat) =1.59 V @ IC =

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60V P-Channel MOSFETs PDP6905 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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PD - 97058B PDP TRENCH IGBT IRGB4055PbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP appli

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www.DataSheet4U.com Operating Instructions | Manual de instrucciones | Manual de instruções | | PDPPLASMA TELEVISION TELEVISOR DE PLASMA TELEVISOR D

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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200V N-Channel MOSFETs PDP20N20 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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ORDER NO. ARP3011 PLASMA DISPLAY PDP-501MX Refer to the service manual ARP2997 for PDP-501MX/KUC. THIS MANUAL IS APPLICABLE TO THE FOLLOWING MODEL(

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80V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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PD - 97569A PDP TRENCH IGBT IRG7SC28UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP appli

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Description The PDPM8PN30V20A uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load

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MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW NPN and PNP Transistors with Monolithic Bias R

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60V P-Channel MOSFETs PDP6901 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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