PDP Datasheet | Specifications & PDF Download

FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

Rating: 1 ★ (8 votes)

Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 4.7 kW NPN and PNP Transistors with Monolithic Bias Resistor Network MUN5332DW1, NSBC143EPD

Rating: 1 ★ (7 votes)

FGPF4633 — 330 V PDP Trench IGBT FGPF4633 330 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.55 V @ IC =

Rating: 1 ★ (7 votes)

www.DataSheet4U.com FGA120N30D 300V PDP IGBT June 2006 FGA120N30D 300V PDP IGBT Features • High Current Capability • Low saturation voltage: VCE(sa

Rating: 1 ★ (5 votes)

FGPF30N45T 450V, 30A PDP Trench IGBT FGPF30N45T 450V, 30A PDP Trench IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.55

Rating: 1 ★ (5 votes)

80V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

Rating: 1 ★ (4 votes)

FGPF70N30 300V, 70A PDP IGBT October 2006 FGPF70N30 300V, 70A PDP IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.4V @

Rating: 1 ★ (4 votes)

FGPF50N33BT — 330 V PDP Trench IGBT FGPF50N33BT 330 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V @

Rating: 1 ★ (4 votes)

Colour Television Module SDI PDP Repair Manual S37SD-YD02 (37-inch SD v4) S42SD-YD05, YD06, YD07 (42-inch SD v2, v3, v4) S42AX-XD02, YD01 (42-inch H

Rating: 1 ★ (4 votes)

PD - 97562 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l

Rating: 1 ★ (4 votes)

PDP Division, LG Electronics Inc. Product Specification of PDP Module CUSTOMER APPROVAL SPECIFICATION (● ) Preliminary Specification ( ) Final Speci

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FGPF70N30T 300V, 70A PDP Trench IGBT FGPF70N30T 300V, 70A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.5V @ IC =

Rating: 1 ★ (4 votes)

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 47 kW NPN and PNP Transistors with Monolithic Bias

Rating: 1 ★ (3 votes)

MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW NPN and PNP Transistors with Monolithic Bias R

Rating: 1 ★ (3 votes)

40V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

Rating: 1 ★ (3 votes)

100V P-Channel MOSFETs PDP0903 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Rating: 1 ★ (3 votes)

600V N-Channel MOSFETs PDP03N60 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

Rating: 1 ★ (3 votes)

500V N-Channel MOSFETs PDP05N50 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

Rating: 1 ★ (3 votes)

100V N-Channel MOSFETs PDP0904 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Rating: 1 ★ (3 votes)

100V N-Channel MOSFETs PDP0966A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

Rating: 1 ★ (3 votes)