PDP Datasheet | Specifications & PDF Download

FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

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80V N-Channel MOSFETs PDP8974 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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FGPF4536 — 360 V PDP Trench IGBT FGPF4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE (sat) =1.59 V @ IC =

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PDP TRENCH IGBT PD - 97562 IRG7IC28UPbF Features l Advanced Trench IGBT Technology Key Parameters VCE min 600 V l Optimized for Sustain and Ene

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PDP TRENCH IGBT PD - 97562 IRG7IC28UPbF Features l Advanced Trench IGBT Technology Key Parameters VCE min 600 V l Optimized for Sustain and Ene

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60V N-Channel MOSFETs PDP6906 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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100V P-Channel MOSFETs PDP0959 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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PD - 97484 IRG7R313UPbF PDP TRENCH IGBT Features Key Parameters l Advanced Trench IGBT Technology VCE min 330 V l Optimized for Sustain and Ene

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PDP TRENCH IGBT PD - 97132 IRGP4086PbF Features Key Parameters l Advanced Trench IGBT Technology VCE min 300 V l Optimized for Sustain and Ene

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FGPF4533 330V, PDP Trench IGBT August 2010 FGPF4533 330V, PDP IGBT Features • High current capability • Low saturation voltage: VCE (sat) =1.55 V @

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FGPF4633 — 330 V PDP Trench IGBT FGPF4633 330 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.55 V @ IC =

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Colour Television Module SDI PDP Repair Manual S37SD-YD02 (37-inch SD v4) S42SD-YD05, YD06, YD07 (42-inch SD v2, v3, v4) S42AX-XD02, YD01 (42-inch H

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PD - 96131A PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Application

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PDP Division, LG Electronics Inc. Product Specification of PDP Module CUSTOMER APPROVAL SPECIFICATION (● ) Preliminary Specification ( ) Final Speci

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PDP TRENCH IGBT PD - 97132 IRGP4086PbF Features Key Parameters l Advanced Trench IGBT Technology VCE min 300 V l Optimized for Sustain and Ene

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65V N-Channel MOSFETs PDP6974-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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www.DataSheet4U.com FGA120N30D 300V PDP IGBT June 2006 FGA120N30D 300V PDP IGBT Features • High Current Capability • Low saturation voltage: VCE(sa

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PDP SWITCH PD - 97100B IRFP4332PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switc

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www.DataSheet4U.com 40 Plasma Display Professional Plasma Display PDP-V402E www.DataSheet4U.com 40” Screen Size 4:3 Aspect Ratio Black Stripe Scr

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www.DataSheet4U.com ORDER NO. ARP3111 PLASMA DISPLAY PDP-433PE PDP-433PU Type WYVI6 KUC THIS MANUAL IS APPLICABLE TO THE FOLLOWING MODEL(S) AND T

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