Part number: IRGP4086PBF
Manufacturer: International Rectifier
File Size: 243.49KB
Download: 📄 Datasheet
Description: PDP TRENCH IGBT
Key Parameters
l Advanced Trench IGBT Technology
VCE min
300
V
l Optimized for Sustain and Energy Recovery
VCE(ON) typ. @ IC = 70A
1.90
V
Circuits in PDP Applic.
l Low VCE(on) and Energy per Pulse (EPULSETM)
for Improved Panel Efficiency
IRP max @ TC= 25°C c TJ max
250 150
A °C
.
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are.
Image gallery
TAGS
📁 Related Datasheet
IRGP4086 - PDP TRENCH IGBT
(International Rectifier)
PDP TRENCH IGBT
PD - 97132
IRGP4086PbF
Features
Key Parameters
l Advanced Trench IGBT Technology
VCE min
300
V
l Optimized for Sustain and Ene.
IRGP4085DPBF - PDP TRENCH IGBT
(International Rectifier)
IRGP4085DPbF
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l.
IRGP4050 - PDP Switch
(IRF)
PD-95882
IRGP4050
PDP Switch
Features
§ § § §
§ §
Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector.
IRGP4055DPBF - PDP TRENCH IGBT
(International Rectifier)
www..com
PD - 97222
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PD.
IRGP4062-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS s.
IRGP4062D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) Trench IG.
IRGP4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) Trench IG.
IRGP4063-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 97404
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction tem.
IRGP4063D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4063DPbF IRGP4063D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • • • Low VCE (ON) Trench IGBT.
IRGP4063D1-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4063D1PbF IRGP4063D1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(.