IRGP4062-EPBF Datasheet - International Rectifier

IRGP4062-EPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4062-EPBF Features

* Low VCE (ON) Trench IGBT Technology

* Low switching losses

* Maximum Junction temperature 175 °C

* 5 μS short circuit SOA

* Square RBSOA

* 100% of the parts tested for ILM

* Positive VCE (ON) Temperature co-efficient

* Tight paramet

Datasheet Details

IRGP4062-EPBF

International Rectifier

247.68 KB

Insulated gate bipolar transistor.

📁 Related Datasheet

IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGP4062DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGP4063-EPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGP4063D-EPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGP4063D1-EPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGP4063D1PBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGP4063DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGP4063PBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

TAGS

IRGP4062-EPBF Distributor