IRGP4062-EPBF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Low VCE (ON) Trench IGBT Technology

* Low switching losses

* Maximum Junction temperature 175 °C

* 5 μS short circuit SOA

* Square RBSOA

* 100% of the parts tested for ILM

* Positive VCE (ON) Temperature co-efficient

* Tight paramet

IRGP4062-EPBF

International Rectifier

247.68 KB

Insulated gate bipolar transistor.

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