Datasheet Details
- Part number
- IRGP4062-EPBF
- Manufacturer
- International Rectifier
- File Size
- 247.68 KB
- Datasheet
- IRGP4062-EPBF-InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062-EPBF Description
INSULATED GATE BIPOLAR TRANSISTOR .
IRGP4062-EPBF Features
* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) Temperature co-efficient
* Tight paramet
IRGP4062-EPBF Applications
* Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI
IRGP4062-EPbF
C
G E
n-channel
VCES = 600V IC = 24A
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