IRGP4062-EPBF Datasheet - International Rectifier

IRGP4062-EPBF, INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR .

Features

* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) Temperature co-efficient
* Tight paramet

Applications

* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI IRGP4062-EPbF C G E n-channel VCES = 600V IC = 24A

IRGP4062-EPBF-InternationalRectifier.pdf