IRGP4062-EPBF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

INSULATED GATE BIPOLAR TRANSISTOR .

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Datasheet Specifications

Part number: IRGP4062-EPBF
Manufacturer: International Rectifier
File Size: 247.68 KB
Datasheet: IRGP4062-EPBF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) Temperature co-efficient
* Tight paramet

Applications

* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI IRGP4062-EPbF C G E n-channel VCES = 600V IC = 24A

IRGP4062-EPBF Distributors

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IRGP4062-EPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGP4062-EPBF-like datasheet