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IRGP4062-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

IRGP4062-EPBF Description

INSULATED GATE BIPOLAR TRANSISTOR .

IRGP4062-EPBF Features

* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% of the parts tested for ILM 
* Positive VCE (ON) Temperature co-efficient
* Tight paramet

IRGP4062-EPBF Applications

* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI IRGP4062-EPbF C G E n-channel VCES = 600V IC = 24A

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International Rectifier IRGP4062-EPBF-like datasheet