IRGP4063D1-EPBF Datasheet - International Rectifier

IRGP4063D1-EPBF, INSULATED GATE BIPOLAR TRANSISTOR

IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(.

Features

* Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5µs short circuit SOA Lead-free, RoHS compliant Base part number IRGP4063D1PbF IRGP4063D1-EPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC =

Applications

* and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Orderable Part Number IRGP4063D1PbF IRGP4063D1-EPbF Standard Pack Form

IRGP4063D1-EPBF-InternationalRectifier.pdf