IRGP4063D1-EPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number:

IRGP4063D1-EPBF

Manufacturer:

International Rectifier

File Size:

1.38 MB

Description:

Insulated gate bipolar transistor.
IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diod.
e VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 48A Appli.

✔ IRGP4063D1-EPBF Features

Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5µs short circuit SOA Lead-free, RoHS compl

✔ IRGP4063D1-EPBF Application

and switching frequencies Improved reliability due to rugged hard switching performance and higher power cap

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IRGP4063D1-EPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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✔ IRGP4063D1-EPBF Features

✔ IRGP4063D1-EPBF Application

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