* Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5µs short circuit SOA Lead-free, RoHS compliant Base part number IRGP4063D1PbF IRGP4063D1-EPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC =
IRGP4063D1-EPBF Datasheet (1.38 MB)
IRGP4063D1-EPBF
International Rectifier
1.38 MB
Insulated gate bipolar transistor.
IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(.
📁 Related Datasheet
IRGP4063D1PBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4063D-EPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4063DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4063-EPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4063PBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4062-EPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4062DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4065DPBF PDP TRENCH IGBT (International Rectifier)
IRGP4065PBF PDP TRENCH IGBT (International Rectifier)
