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IRGP4063DPBF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

IRGP4063DPBF Features

* Low VCE (ON) Trench IGBT Technology

* Low switching losses

* Maximum Junction temperature 175 °C

* 5 μS short circuit SOA

* Square RBSOA

* 100% of the parts tested for 4X rated current (ILM)

* Positive VCE (ON) Temperature co-efficient

IRGP4063DPBF Datasheet (345.77 KB)

Preview of IRGP4063DPBF PDF

Datasheet Details

Part number:

IRGP4063DPBF

Manufacturer:

International Rectifier

File Size:

345.77 KB

Description:

Insulated gate bipolar transistor.

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IRGP4063DPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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