Datasheet Details
- Part number
- IRGP4063DPBF
- Manufacturer
- International Rectifier
- File Size
- 345.77 KB
- Datasheet
- IRGP4063DPBF_InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063DPBF Description
IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .
IRGP4063DPBF Features
* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% of the parts tested for 4X rated current (ILM)
* Positive VCE (ON) Temperature co-efficient
IRGP4063DPBF Applications
* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI
C E
GC IRGP4063DPbF
G
E C G IRGP4063D-EPbF
G Gate
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