IRGP4063DPBF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Datasheet Specifications

Part number: IRGP4063DPBF
Manufacturer: International Rectifier
File Size: 345.77 KB
Datasheet: IRGP4063DPBF_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% of the parts tested for 4X rated current (ILM)
* Positive VCE (ON) Temperature co-efficient

Applications

* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI C E GC IRGP4063DPbF G E C G IRGP4063D-EPbF G Gate

IRGP4063DPBF Distributors

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IRGP4063DPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGP4063DPBF-like datasheet