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IRGP4063-EPBF Datasheet - International Rectifier

IRGP4063-EPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4063-EPBF Features

* Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) Temperature co-efficient Tig

IRGP4063-EPBF Datasheet (274.11 KB)

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Datasheet Details

Part number:

IRGP4063-EPBF

Manufacturer:

International Rectifier

File Size:

274.11 KB

Description:

Insulated gate bipolar transistor.

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IRGP4063-EPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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