IRGP4063-EPBF Features
* Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Tig
IRGP4063PBF-InternationalRectifier.pdf
Datasheet Details
IRGP4063-EPBF, IRGP4063PBF
International Rectifier
274.11 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP4063-EPBF, IRGP4063PBF.
Please refer to the document for exact specifications by model.
IRGP4063-EPBF Distributor
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