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IRGP4063D-EPBF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

IRGP4063D-EPBF Features

* Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) T

IRGP4063D-EPBF Datasheet (345.77 KB)

Preview of IRGP4063D-EPBF PDF

Datasheet Details

Part number:

IRGP4063D-EPBF

Manufacturer:

International Rectifier

File Size:

345.77 KB

Description:

Insulated gate bipolar transistor.

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IRGP4063D-EPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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