IRGP4063D-EPBF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Datasheet Specifications

Part number: IRGP4063D-EPBF
Manufacturer: International Rectifier
File Size: 345.77 KB
Datasheet: IRGP4063D-EPBF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) T

Applications

* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI C G E C G IRGP4063DPbF C G E IRGP4063D-EPbF G

IRGP4063D-EPBF Distributors

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IRGP4063D-EPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGP4063D-EPBF-like datasheet