IRGP4063D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGP4063D-EPBF
Manufacturer	International Rectifier
File Size	345.77 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4063D-EPBF-InternationalRectifier.pdf

Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) ty.

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Published: Jul 21, 2014 |