IRGP420U
IRF
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Insulated gate bipolar transistor. Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar
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IRGP4262D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4262DPbF IRGP4262D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) .
IRGP4262DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4262DPbF IRGP4262D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) .
IRGP4263-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4263PbF IRGP4263-EPbF
Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC =.
IRGP4263D-EPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 650V IC = 60A, TC =100°C
IRGP4263DPbF IRGP4263D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 5.5.
IRGP4263DPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 650V IC = 60A, TC =100°C
IRGP4263DPbF IRGP4263D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 5.5.
IRGP4263PBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4263PbF IRGP4263-EPbF
Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC =.
IRGP4266-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4266PbF IRGP4266-EPbF
Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75.
IRGP4266D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4266DPbF IRGP4266D-EPbF
VCES = 650V IC = 90A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 5.5.
IRGP4266DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4266DPbF IRGP4266D-EPbF
VCES = 650V IC = 90A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 5.5.
IRGP4266PBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4266PbF IRGP4266-EPbF
Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75.
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