IRGP4263DPbF Datasheet, Transistor, International Rectifier

IRGP4263DPbF Features

• Transistor Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Benefit

PDF File Details

Part number:

IRGP4263DPbF

Manufacturer:

International Rectifier

File Size:

920.92kb

Download:

📄 Datasheet

Description:

Insulated gate bipolar transistor.

IRGP4263DPbF Application

• Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding G E n-channel G Gate GCE IRGP4263DPbF  TO‐

TAGS

IRGP4263DPbF

International Rectifier

📁 Related Datasheet

IRGP4263D-EPbF - Insulated Gate Bipolar Transistor (International Rectifier)
  VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5.

IRGP4263-EPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC =.

IRGP4263PBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC =.

IRGP4262D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) .

IRGP4262DPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) .

IRGP4266-EPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75.

IRGP4266D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5.

IRGP4266DPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5.

IRGP4266PBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75.

IRGP420U - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
Previous Datasheet Index Next Data Sheet PD - 9.781A IRGP420U INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all tai.