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IRGP4263DPbF Insulated Gate Bipolar Transistor

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Description

  VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5.

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Datasheet Specifications

Part number
IRGP4263DPbF
Manufacturer
International Rectifier
File Size
920.92 KB
Datasheet
IRGP4263DPbF-InternationalRectifier.pdf
Description
Insulated Gate Bipolar Transistor

Applications

* Industrial Motor Drive
* UPS
* Solar Inverters

IRGP4263DPbF Distributors

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