* Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard
IRGP4263D-EPbF Datasheet (920.92 KB)
IRGP4263D-EPbF
International Rectifier
920.92 KB
Insulated gate bipolar transistor.
VCES = 650V IC = 60A, TC =100°C
IRGP4263DPbF IRGP4263D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 5.5.
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