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IRGP4262D-EPBF Datasheet - International Rectifier

IRGP4262D-EPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4262D-EPBF Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Base part number IRGP4262DPBF IRGP4262D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°

IRGP4262D-EPBF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGP4262D-EPBF

Manufacturer:

International Rectifier

File Size:

690.16 KB

Description:

Insulated gate bipolar transistor.

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IRGP4262D-EPBF IRGP4262D-EPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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