* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Base part number IRGP4262DPBF IRGP4262D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°
IRGP4262D-EPBF Datasheet (690.16 KB)
IRGP4262D-EPBF
International Rectifier
690.16 KB
Insulated gate bipolar transistor.
IRGP4262DPbF IRGP4262D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) .
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