Datasheet Specifications
- Part number
- IRGP4262D-EPBF
- Manufacturer
- International Rectifier
- File Size
- 690.16 KB
- Datasheet
- IRGP4262D-EPBF-InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
Description
IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) .
Features
* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Base part number IRGP4262DPBF IRGP4262D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°Applications
* Industrial Motor DriveIRGP4262D-EPBF Distributors
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