IRGP4263-EPBF
IRGP4263-EPBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
IRGP4263Pb F IRGP4263-EPb F
Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C t SC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A
n-channel
Applications
- Industrial Motor Drive
- Inverters
- UPS
- Welding G Gate
C G IRGP4263Pb F C Collector
C I RGP4263‐EPb F E Emitter
Features
Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, Ro HS pliant Base part number IRG7P4263Pb F IRG7P4263-EPb F...
