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IRGP4263-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Base part number IRG7P4263PbF IRG7P4263-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4263D-EPbF Insulated Gate Bipolar Transistor
IRGP4263DPbF Insulated Gate Bipolar Transistor
IRGP4263PBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4262D-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4262DPBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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  IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A G E   C G G   n-channel Applications • Industrial Motor Drive • Inverters • UPS • Welding G Gate C G IRGP4263PbF  C Collector E G C I  RGP4263‐EPbF  E Emitter E Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.