IRGP4263DPbF Overview
VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications Industrial Motor Drive UPS Solar Inverters Welding G E n-channel G Gate GCE IRGP4263DPbF TO‐247AC C Collector E GC IRGP4263D‐EPbF TO‐247AD E Emitter.