Download the IRGP4263PBF datasheet PDF.
This datasheet also covers the IRGP4263-EPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Base part number IRG7P4263PbF IRG7P4263-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=.
Note: The manufacturer provides a single datasheet file (IRGP4263-EPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRGP4263PBF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRGP4263PBF. For precise diagrams, and layout, please refer to the original PDF.
IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A G E C G G n-chann...
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.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A G E C G G n-channel Applications • Industrial Motor Drive • Inverters • UPS • Welding G Gate C G IRGP4263PbF C Collector E G C I RGP4263‐EPbF E Emitter E Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.
More Datasheets from International Rectifier (now Infineon)
IRGP4263PBF Datasheet
