Datasheet Summary
IRGP4263PbF IRGP4263-EPbF
Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A
n-channel
Applications
- Industrial Motor Drive
- Inverters
- UPS
- Welding G Gate
C G IRGP4263PbF C Collector
C I RGP4263‐EPbF E Emitter
Features
Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS pliant Base part number IRG7P4263PbF IRG7P4263-EPbF...