IRGP4263PBF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRGP4263PBF, a member of the IRGP4263-EPBF INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

Part number	IRGP4263PBF
Manufacturer	International Rectifier
File Size	887.41 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4263PBF Datasheet
Additional preview pages of the IRGP4263PBF datasheet.

Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Base part number IRG7P4263PbF IRG7P4263-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=.

Other Datasheets by International Rectifier

Published: Mar 31, 2014 |