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IRGP4263PBF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRGP4263PBF, a member of the IRGP4263-EPBF INSULATED GATE BIPOLAR TRANSISTOR family.

Datasheet Summary

Features

  • Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Base part number IRG7P4263PbF IRG7P4263-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=.

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  IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A G E   C G G   n-channel Applications • Industrial Motor Drive • Inverters • UPS • Welding G Gate C G IRGP4263PbF  C Collector E G C I  RGP4263‐EPbF  E Emitter E Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.
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