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IRGP4263D-EPbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGP4263D-EPbF, a member of the IRGP4263DPbF Insulated Gate Bipolar Transistor family.

Product Overview

International Rectifier

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IRGP4263D-EPbF Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGP4263D-EPbF

Datasheet Details

Part number	IRGP4263D-EPbF
Manufacturer	International Rectifier
File Size	920.92 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP4263D-EPbF Datasheet
Additional preview pages of the IRGP4263D-EPbF datasheet.

IRGP4263D-EPbF Product details

Features

Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Benefits High efficiency in a wide range of.

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Other Datasheets by International Rectifier

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Published: Jan 16, 2017 |