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IRGP4263D-EPbF - Insulated Gate Bipolar Transistor

Download the IRGP4263D-EPbF datasheet PDF. This datasheet also covers the IRGP4263DPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Benefits High efficiency in a wide range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP4263DPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IRGP4263D-EPbF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRGP4263D-EPbF. For precise diagrams, and layout, please refer to the original PDF.

VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5µs, TJ(max) = 175°C VCE(ON) t...

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Ultrafast Soft Recovery Diode C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding G E n-channel G Gate GCE IRGP4263DPbF TO‐247AC C Collector E GC IRGP4263D‐EPbF TO‐247AD E Emitter Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.