Datasheet Summary
IRGP4262DPbF IRGP4262D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 24A Applications
- Industrial Motor Drive
- UPS G Gate
G n-channel
G IRGP4262DPbF TO-247AC C Collector
G IRGP4262D-EPbF TO-247AD E Emitter
Features
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Base part number IRGP4262DPBF IRGP4262D-EPBF...