IRGP4266-EPBF Datasheet, Transistor, International Rectifier

IRGP4266-EPBF Features

  • Transistor Low VCE(ON) and switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5.5µs short circuit SOA Lead-Free, RoHS compliant Base par

PDF File Details

Part number:

IRGP4266-EPBF

Manufacturer:

International Rectifier

File Size:

910.45kb

Download:

📄 Datasheet

Description:

Insulated gate bipolar transistor.

Datasheet Preview: IRGP4266-EPBF 📥 Download PDF (910.45kb)
Page 2 of IRGP4266-EPBF Page 3 of IRGP4266-EPBF

IRGP4266-EPBF Application

  • Applications
  • Industrial Motor Drive
  • Inverters
  • UPS
  • Welding G E C G G C G E C G IRGP4266-EPbF TO-247AD E

TAGS

IRGP4266-EPBF
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

📁 Related Datasheet

IRGP4266D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5.

IRGP4266DPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5.

IRGP4266PBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75.

IRGP4262D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) .

IRGP4262DPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) .

IRGP4263-EPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC =.

IRGP4263D-EPbF - Insulated Gate Bipolar Transistor (International Rectifier)
  VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5.

IRGP4263DPbF - Insulated Gate Bipolar Transistor (International Rectifier)
  VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5.

IRGP4263PBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC =.

IRGP420U - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
Previous Datasheet Index Next Data Sheet PD - 9.781A IRGP420U INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all tai.

Stock and price

part
Infineon Technologies AG
IGBT 650V 140A TO-247AD
DigiKey
IRGP4266-EPBF
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts