* Low VCE(ON) and switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5.5µs short circuit SOA Lead-Free, RoHS compliant Base part number IRGP4266PbF IRGP4266-EPbF Package Type TO-247AC TO-247AD Benefits High efficiency in a wide range of
IRGP4266-EPBF Datasheet (910.45 KB)
IRGP4266-EPBF
International Rectifier
910.45 KB
Insulated gate bipolar transistor.
IRGP4266PbF IRGP4266-EPbF
Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75.
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