* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient G E n-channel G Gate GCE IRGP4266DPbF TO‐247AC C Collector E GC IRGP4266D‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of Ap
IRGP4266D-EPbF Datasheet (874.09 KB)
IRGP4266D-EPbF
International Rectifier
874.09 KB
Insulated gate bipolar transistor.
IRGP4266DPbF IRGP4266D-EPbF
VCES = 650V IC = 90A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 5.5.
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