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IRGP4266D-EPbF, IRGP4266DPbF Datasheet - International Rectifier

IRGP4266D-EPbF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4266D-EPbF Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient G E n-channel G Gate GCE IRGP4266DPbF  TO‐247AC  C Collector E GC IRGP4266D‐EPbF  TO‐247AD  E Emitter Benefits High Efficiency in a Wide Range of Ap

IRGP4266DPbF-InternationalRectifier.pdf

This datasheet PDF includes multiple part numbers: IRGP4266D-EPbF, IRGP4266DPbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IRGP4266D-EPbF, IRGP4266DPbF

Manufacturer:

International Rectifier

File Size:

874.09 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRGP4266D-EPbF, IRGP4266DPbF.
Please refer to the document for exact specifications by model.

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IRGP4266D-EPbF IRGP4266DPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

IRGP4266D-EPbF Distributor