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IRF Matched Datasheet



Part Number Description Manufacture
IRFZ44N
N-Channel MOSFET Transistor

·Drain Current
  –ID=49A@ TC=25℃
·Drain Source Voltage- : VDSS= 55V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max)
·Fast Switching DESCRIPTION
·Designed for low voltage, high speed switching applications in power supplies, converters
Manufacture
INCHANGE
IRF3205
N-Channel MOSFET Transistor

·Static drain-source on-resistance: RDS(on) ≤8.0mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·reliable device for use in a wide vari
Manufacture
Inchange Semiconductor
IRFP260N
Power MOSFET
5°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Curre
Manufacture
International Rectifier
IRF630
N-channel mosfet transistor
With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source ‹ Absolute Maximum Ratings Tc=25 SYMBOL VDSS VGS ID Ptot Tj Tstg PARAMETER Drain-source voltage (VGS=0) Gate-source voltag
Manufacture
Inchange Semiconductor
IRF3710
Power MOSFET
C = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energ
Manufacture
International Rectifier
IRF9540N
Power MOSFET
IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalan
Manufacture
International Rectifier
F9540N
IRF9540N
D @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Curre
Manufacture
International Rectifier
FB31N20D
IRFB31N20D
Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V Input Forward Converters Notes  through ‡ are on page 11 www.irf.com 1 2/14/00 IRFB/IRFS/IRFSL31N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Bre
Manufacture
International Rectifier
IRF1010E
Power MOSFET
uous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Solderin
Manufacture
International Rectifier
F9530N
IRF9530N
C = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current
Manufacture
International Rectifier

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