| Part Number | Description | Manufacture |
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N-Channel Trench Process Power MOSFET Transistor ● VDS=55V; ID=105A@ VGS=10V; RDS(ON)6.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply ● Inverter Application G DS TO-220CB Top View Schemat |
 Thinki Semiconductor |
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N-Channel MOSFET Transistor ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters |
 INCHANGE |
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Power MOSFET C = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energ |
 International Rectifier |
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N-Channel Trench Power MOSFETs ● VDS=60V；ID=45A@ VGS=10V； RDS(ON)7.5mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply G DS TO-251 Top View Schematic Diagram VDSS = 60 V IDS |
Thinki Semiconductor |
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HEXFET Power MOSFET Avalanche Characteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÃAvalanche Current gRepetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter kJunction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Su |
International Rectifier |
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IRFB31N20D Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V Input Forward Converters Notes through are on page 11 www.irf.com 1 2/14/00 IRFB/IRFS/IRFSL31N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Bre |
International Rectifier |
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N-Channel Power MOSFET • 20A, 500V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surf |
 Intersil Corporation |
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IRF9530N C = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current |
International Rectifier |
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N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) |
INCHANGE |
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N-Channel Power MOSFET se R ӨJA Thermal Resistance, Junction to Ambient PD Total Power Dissipation at Tc=25¥ Notes Rating IRF440/442 IRF840/842 MTM7N50 500 500 ±20 -50 to +150 275 IRF440/441 IRF840/841 0.85 8 32 1.0 60 125 IRF442/443 IRF842/843 1.1 7 28 1.0 60 125 |
 ART CHIP |
| Total 6005 results |
