| No |
Part Number |
Description |
Manufacture |
PDF |
| 4849 |
IRF-182xx |
Inductors
w w ELECTRICAL SPECIFICATIONS
MATERIAL SPECIFICATIONS
Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite.
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Inductors
Epoxy Conformal Coated Unifo |
Vishay Intertechnology
|
|
| 4848 |
IRF-46 |
Inductors Epoxy Conformal Coated
IRF-46
Vishay Dale
Inductors
Epoxy Conformal Coated, Axial Leaded
FEATURES
• Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q |
Vishay Siliconix
|
|
| 4847 |
IRF034 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
PD - 90585
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF034
IRF034 60V, N-CHANNEL
BVDSS RDS(on) 60V 0.050Ω
ID 25Α
|
International Rectifier
|
|
| 4846 |
IRF034 |
N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF034
DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On |
Inchange Semiconductor
|
|
| 4845 |
IRF044 |
N-CHANNEL POWER MOSFET
IRF044
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY S |
Seme LAB
|
|
| 4844 |
IRF044 |
N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF044
DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On |
Inchange Semiconductor
|
|
| 4843 |
IRF044 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE
PD - 90584
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α
IRF044 |
International Rectifier
|
|
| 4842 |
IRF044SMD |
N-CHANNEL POWER MOSFET
LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
IRF044SMD
N–CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M a x .
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) |
Seme LAB
|
|
| 4841 |
IRF054 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
PD - 90640
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) IRF054 60V 0.022Ω ID 45A*
IRF054 60V, N-CHANNEL
The HE |
International Rectifier
|
|
| 4840 |
IRF054 |
N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF054
DESCRIPTION ·Drain Current ID=45A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On |
Inchange Semiconductor
|
|
| 4839 |
IRF054 |
Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-204AE
|
New Jersey Semiconductor
|
|
| 4838 |
IRF054SMD |
N-CHANNEL POWER MOSFET
LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
IRF054SMD
N–CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M a x .
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) |
Seme LAB
|
|
