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IRF540 Key Features

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • 175 °C operating temperature
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Material categorization: for definitions of pliance please see .vishay./doc?99912
  • This datasheet provides information about parts that are

Other IRF540 Datasheets

Manufacturer Part Number Description
Inchange Semiconductor Logo Inchange Semiconductor IRF540 N-Channel MOSFET Transistor
NXP Logo NXP Semiconductors IRF540 N-channel TrenchMOS transistor
STMicroelectronics Logo STMicroelectronics IRF540 100V 30A N-Channel Power MOSFET
Fairchild Semiconductor Logo Fairchild IRF540 N-Channel Power MOSFET
International Rectifier Logo International Rectifier IRF540 HEXFET POWER MOSFET

View all IRF540 datasheets →

IRF540 Description

Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.