Inchange Semiconductor IRF540
N-Channel MOSFET Transistor
FEATURES
●Low RDS(on)●VGS Rated at ±20V
●Silicon Gate for Fast Switching Speed
●Rugged
●Low Drive Requirements
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous@ TC=25℃ 28 ID A Drain Current-continuous@ TC=100℃ 20 IDM Drain Current-Single Plused 110 A PD Total Dissipation @TC=25℃ 100 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62 ℃/W IRF540 isc website: 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor IRF540 ELECTR...