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IRF540 Datasheet PDF

Inchange Semiconductor IRF540

N-Channel MOSFET Transistor

Part No. IRF540
Datasheet IRF540 Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET Transistor
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IRF540 datasheet page 1 preview

FEATURES

●Low RDS(on)
●VGS Rated at ±20V
●Silicon Gate for Fast Switching Speed
●Rugged
●Low Drive Requirements
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous@ TC=25℃ 28 ID A Drain Current-continuous@ TC=100℃ 20 IDM Drain Current-Single Plused 110 A PD Total Dissipation @TC=25℃ 100 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃
●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62 ℃/W IRF540 isc website: 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor IRF540 ELECTR...
IRF540 page 2 preview