IRF540
Description
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Key Features
- Low on-state resistance
- Fast switching
- Low SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 23 A g RDS(ON) ≤ 77 mΩ s
Representative IRF540 image (package may vary by manufacturer)
