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IRF540 - N-Channel Power MOSFET

General Description

These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors.

The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation.

Key Features

  • 25A and 28A, 80V and 100V.
  • rDS(ON) = 0.077Ω and 0.100Ω.
  • Single Pulse Avalanche Energy Rated.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”.

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Datasheet Details

Part number IRF540
Manufacturer Harris
File Size 142.43 KB
Description N-Channel Power MOSFET
Datasheet download datasheet IRF540 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor November 1997 IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Features • 25A and 28A, 80V and 100V • rDS(ON) = 0.077Ω and 0.100Ω • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Description These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation.