IRF540 Datasheet | Harris

Features - 25A and 28A, 80V and 100V - r DS(ON) = 0.077Ω and 0.100Ω - Single Pulse Avalanche Energy Rated - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Description These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation. All of these po wer MOSFETs are designed f or applications such as s witching regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s witching tr ansistors requir ing high speed and lo w gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421. Ordering Information PART NUMBER PACKAGE BRAND TO-220AB IRF541 TO-220AB IRF541 IRF542 TO-220AB IRF542 IRF543 TO-220AB IRF543 RF1S540 TO-262AA RF1S540 RF1S540SM TO-263AB RF1S540SM NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A. Symbol Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC...