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IRF540 - N-Channel MOSFET Transistor

Key Features

  • Low RDS(on).
  • VGS Rated at ±20V.
  • Silicon Gate for Fast Switching Speed.
  • Rugged.
  • Low Drive Requirements.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel Mosfet Transistor FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous@ TC=25℃ 28 ID A Drain Current-continuous@ TC=100℃ 20 IDM Drain Current-Single Plused 110 A PD Total Dissipation @TC=25℃ 100 W Tj Max.