IRF541 Datasheet | Inchange Semiconductor

FEATURES - Low RDS(on) - VGS Rated at ±20V - Silicon Gate for Fast Switching Speed - Rugged - Low Drive Requirements - DESCRITION - Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 80 ±20 ID Drain Current-Continuous 28 A IDM Drain Current-Single Plused 110 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdf Factory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL...