IRF541 Overview
Representative IRF541 image (package may vary by manufacturer)
Description
These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation.
Key Features
- rDS(ON) = 0.077Ω and 0.100Ω
- Single Pulse Avalanche Energy Rated
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
