IRF541 Description
These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation. All of these po wer MOSFETs are designed f or applications such as s witching regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s...
IRF541 Key Features
- 25A and 28A, 80V and 100V
- rDS(ON) = 0.077Ω and 0.100Ω
- Single Pulse Avalanche Energy Rated
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”