Harris IRF541
The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation. These types can be operated directly from integrated circuits.| Part No. | IRF541 |
|---|---|
| Datasheet | IRF541 Download |
| Manufacturer |  Harris |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. All of these po wer MOSFETs are designed f or applications such as s witching regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s witching tr ansistors requir ing high speed and lo w gate drive power. Formerly developmental type TA17421. November 1997FEATURES
● 25A and 28A, 80V and 100V● rDS(ON) = 0.077Ω and 0.100Ω
● Single Pulse Avalanche Energy Rated
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB TO-262AA TO-263AB BRAND IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM Symbol D G S NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.
