Description
These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors.
The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation.
Features
- 25A and 28A, 80V and 100V.
- rDS(ON) = 0.077Ω and 0.100Ω.
- Single Pulse Avalanche Energy Rated.
- Nanosecond Switching Speeds.
- Linear Transfer Characteristics.
- High Input Impedance.
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM.