IRF541 Datasheet PDF

APPLICATIONS

: e UNINTERRUPTIBLE POWER SUPPLIES e MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications.

APPLICATIONS

include DC/DC converters, UPS, battery chargers, secondary regulators, servo control, power-audio amplifiers and robotics. TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

TO-220 ISOWATT220 VOS * VOGR * VGS 10M (e) IDLM Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 Kn) Gate-source voltage Drain current (pulsed) Drain inductive current, clamped (L = 100 fLH) Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc = 100°C Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Total dissipation at Tc <25°C Derating factor Tstg Storage temperature T- Max. operating junction temperature IRF 540 541 542 543 540FI 541FI 542FI 543FI 100 80 100 80 100 80 100 80 ±20 110 110 100 100 110...