IRF541 Datasheet | STMicroelectronics

IRF 540/FI-541/FI IRF 542/FI-543/FI - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI Voss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V Ro S(on) 0.077 n 0.077 n 0.077 n 0.077 n 0.100 n 0.100 n 0.100 n 0.100 n - 28 A 15 A 28 A 15 A 25 A 14 A 25 A 14 A e 80-100 VOLTS - FOR DC/DC CONVERTERS e HIGH CURRENT e ULTRA FAST SWITCHING e EASY DRIVE- FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: e UNINTERRUPTIBLE POWER SUPPLIES e MOTOR CONTROLS - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS, battery chargers, secondary regulators, servo control, power-audio amplifiers and robotics. TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS TO-220 ISOWATT220 - VOGR - VGS 10M (e) IDLM Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 Kn) Gate-source voltage Drain current (pulsed) Drain inductive current, clamped (L = 100 f LH) Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc =...