IRF540 Overview
1 10 ± 100 Unit V µA µA nA ON (∗) S ymb ol V GS(th ) RDS( o n ) ID(o n) P a ra m et er Test Conditions Gate Threshold Voltage VDS = VGS ID = 250 µA Static Drain-source On VGS = 10V ID = 15 A Resistance On St ate Drain Current VDS > ID(on) x RDS(on) max VGS = 10 V Min. 4 Unit V 0.05 0.077 Ω 30 A DYNAMIC S ymb ol gfs (∗) Ciss Coss Crss P a ra m et er Forward Transconductance Input Capacitance Output Capacitance...
