STMicroelectronics IRF540
100V 30A N-Channel Power MOSFET
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTER s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.) 3 2 1 TO-220 3 2 1 TO-220FI INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS VDGR VGS ID ID IDM (●) Ptot Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Tot al Dissipation at Tc = 25 oC Derating Factor Viso Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (●) Pulse width limited by safe operating area Value IRF530 IRF 530 FI 100 100 ± 20 30 17 21 12 120 120 150 45 1 0.3 - 2000 -65 to 175 175 (1) ISD ≤30 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni t V V V A A A W W/oC V oC oC April 1998 1/6 IRF540/IRF540FI THERMAL DATA Rt hj-ca se Rt hj- amb Rthc- si nk Tl Thermal Resistance Junction-case Max T...