DESCRIPTION
They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators. convertors,UPS, switching mode power supplies and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These transistors can be operated directly from integrated circuits. FEATURES
RDS(ON) = 0.077Ω @ VGS = 10V Ultra low gate charge(72nC Max.) Low reverse transfer capacitance (CRSS = 120pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature D GDS TO-220AB (IRF540A) D (Drain) G (Gate) S (Source) PRODUC
Nell Power Semiconductor
