IRG71C28U Features
* l Advanced Trench IGBT Technology Key Parameters VCE min 600 V l Optimized for Sustain and Energy Recovery circuits in PDP applications c VCE(ON) typ. @ IC = 40A IRP max @ TC= 25°C 1.70 225 V A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l
IRG7IC28UPBF-InternationalRectifier.pdf
Datasheet Details
IRG71C28U, IRG7IC28UPBF
International Rectifier
385.43 KB
Pdp trench igbt.
This datasheet PDF includes multiple part numbers: IRG71C28U, IRG7IC28UPBF.
Please refer to the document for exact specifications by model.
IRG71C28U Distributor
📁 Related Datasheet
IRG7I313UPBF PDP TRENCH IGBT (International Rectifier)
IRG7IC28U PDP TRENCH IGBT (International Rectifier)
IRG7IC28UPBF PDP TRENCH IGBT (International Rectifier)
IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PG35UPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PG42UDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH28UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
