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IRG7PG35UPbF IRG7PG35U-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead-free package
C
G E
n-channel C
VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175°C
VCE(ON) typ. = 1.9V@ IC = 20A
C
Benefits
High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low
VCE(on) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation
Applications
U.P.S.
IRG7PG35UPBF Datasheet
