IRG7PH28UD1MPBF Datasheet - International Rectifier

IRG7PH28UD1MPBF, INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH28UD1PbF IRG7PH28UD1MPbF C VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION .

datasheet Preview Page 1 from Datasheet4u.com

IRG7PH28UD1MPBF-InternationalRectifier.pdf

IRG7PH28UD1MPBF Datasheet Preview — Preview of IRG7PH28UD1MPBF PDF

Datasheet Details

Part number:

IRG7PH28UD1MPBF

Manufacturer:

International Rectifier

File Size:

409.01 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

*  Low VCE (ON) trench IGBT technology
*  Low switching losses
*  Square RBSOA
*  Ultra-low VF diode
*  1300Vpk repetitive transient capacity
*  100% of the parts tested for ILM
*  Positive VCE (ON) temperature co-efficient
*  Tight parameter distribution
*  Lead

IRG7PH28UD1MPBF Distributors

📁 Related Datasheet

IRG4BC20F IRG4BC20FD IRG4BC20FD-S IRG4BC20K IRG4BC20K-S IRG4BC20KD

📌 All Tags

IRG7PH28UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRG7PH28UD1MPBF-like datasheet