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IRG7PH28UD1MPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRG7PH28UD1MPBF
Manufacturer	International Rectifier ↗
File Size	409.01 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH28UD1MPBF-InternationalRectifier.pdf

IRG7PH28UD1MPBF Product details

Features

 Low VCE (ON) trench IGBT technology.
 Low switching losses.
 Square RBSOA.
 Ultra-low VF diode.
 1300Vpk repetitive transient capacity.
 100% of the parts tested for ILM.
 Positive VCE (ON) temperature co-efficient.
 Tight parameter distribution.
 Lead-free package Benefits.
 Device optimized for induction heating and soft switching.

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Published: Mar 31, 2014 |