IRG7PH35UD-EP INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Datasheet Specifications

Part number: IRG7PH35UD-EP
Manufacturer: International Rectifier
File Size: 492.67 KB
Datasheet: IRG7PH35UD-EP_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-

Applications

* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation n-channel C VCE(on) typ. = 1.9V C Applications

IRG7PH35UD-EP Distributors

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRG7PH35UD-EP-like datasheet