Datasheet Details
- Part number
- IRG7PH35UD-EP
- Manufacturer
- International Rectifier
- File Size
- 492.67 KB
- Datasheet
- IRG7PH35UD-EP_InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UD-EP Description
PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .
IRG7PH35UD-EP Features
* Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-
IRG7PH35UD-EP Applications
* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation
n-channel
C
VCE(on) typ. = 1.9V
C
Applications
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