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IRG7PH35UD-EP

INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35UD-EP Features

* Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-

IRG7PH35UD-EP Datasheet (492.67 KB)

Preview of IRG7PH35UD-EP PDF

Datasheet Details

Part number:

IRG7PH35UD-EP

Manufacturer:

International Rectifier

File Size:

492.67 KB

Description:

Insulated gate bipolar transistor.

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IRG7PH35UD-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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