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IRG7PH35UD1MPBF Datasheet - International Rectifier

IRG7PH35UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35UD1MPBF Features

* Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILMĀ Positive VCE (ON) Temperature Co-Efficient Tight

IRG7PH35UD1MPBF Datasheet (306.47 KB)

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Datasheet Details

Part number:

IRG7PH35UD1MPBF

Manufacturer:

International Rectifier

File Size:

306.47 KB

Description:

Insulated gate bipolar transistor.

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IRG7PH35UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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