IRG7PH35UPBF, IRG7PH35U-EP Datasheet - International Rectifier

IRG7PH35UPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35UPBF Features

* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre

IRG7PH35U-EP-InternationalRectifier.pdf

IRG7PH35UPBF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRG7PH35UPBF, IRG7PH35U-EP. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRG7PH35UPBF, IRG7PH35U-EP

Manufacturer:

International Rectifier

File Size:

397.80 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRG7PH35UPBF, IRG7PH35U-EP.
Please refer to the document for exact specifications by model.

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IRG7PH35UPBF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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